onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G

Κωδικός Προϊόντος της RS: 780-0674Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTMD4N03R2G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V dc

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 8,90

€ 0,89 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,04

€ 1,104 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G
Επιλέγξτε συσκευασία

€ 8,90

€ 0,89 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,04

€ 1,104 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 90€ 0,89€ 8,90
100 - 240€ 0,76€ 7,60
250 - 490€ 0,68€ 6,80
500 - 990€ 0,60€ 6,00
1000+€ 0,55€ 5,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V dc

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more