N-Channel MOSFET, 313 A, 40 V, 8-Pin DFN onsemi NTMFSC0D9N04CL

Κωδικός Προϊόντος της RS: 195-2663Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTMFSC0D9N04CL
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

313 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

850 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

143 @ 10 V nC

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.9mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 4,13

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 5,121

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 313 A, 40 V, 8-Pin DFN onsemi NTMFSC0D9N04CL

€ 4,13

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 5,121

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 313 A, 40 V, 8-Pin DFN onsemi NTMFSC0D9N04CL
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

313 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

850 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

143 @ 10 V nC

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.9mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more