onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
330 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
5mm
Typical Gate Charge @ Vgs
143 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.2mm
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€ 6.420,00
€ 2,14 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7.960,80
€ 2,654 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
€ 6.420,00
€ 2,14 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7.960,80
€ 2,654 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
330 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
5mm
Typical Gate Charge @ Vgs
143 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products