onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G

Κωδικός Προϊόντος της RS: 791-6299PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTR0202PLT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2.18 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 26,00

€ 0,26 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 32,24

€ 0,322 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G
Επιλέγξτε συσκευασία

€ 26,00

€ 0,26 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 32,24

€ 0,322 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
100 - 200€ 0,26€ 13,00
250 - 450€ 0,21€ 10,50
500 - 950€ 0,21€ 10,50
1000+€ 0,16€ 8,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2.18 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more