onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G

Κωδικός Προϊόντος της RS: 790-5283PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTR4003NT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

690 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.15 nC @ 5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 50,00

€ 0,10 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 62,00

€ 0,124 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G
Επιλέγξτε συσκευασία

€ 50,00

€ 0,10 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 62,00

€ 0,124 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
500 - 900€ 0,10€ 10,00
1000+€ 0,08€ 8,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

690 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.15 nC @ 5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more