onsemi P-Channel MOSFET, 2.4 A, 20 V, 3-Pin SOT-23 NTR4101PT1G

Κωδικός Προϊόντος της RS: 688-9152PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTR4101PT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

730 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 7,80

€ 0,39 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,67

€ 0,484 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi P-Channel MOSFET, 2.4 A, 20 V, 3-Pin SOT-23 NTR4101PT1G
Επιλέγξτε συσκευασία

€ 7,80

€ 0,39 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,67

€ 0,484 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi P-Channel MOSFET, 2.4 A, 20 V, 3-Pin SOT-23 NTR4101PT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
20 - 198€ 0,39€ 0,78
200 - 998€ 0,34€ 0,68
1000 - 1998€ 0,31€ 0,62
2000+€ 0,29€ 0,58

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

730 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more