N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
480 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
4.76 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
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€ 0,15
Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,186
Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α
3000
€ 0,15
Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,186
Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α
3000
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
480 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
4.76 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products