onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G

Κωδικός Προϊόντος της RS: 796-1381Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTR5198NLT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

5.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 6,50

€ 0,26 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,06

€ 0,322 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G
Επιλέγξτε συσκευασία

€ 6,50

€ 0,26 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,06

€ 0,322 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
25 - 75€ 0,26€ 6,50
100 - 225€ 0,21€ 5,25
250 - 475€ 0,18€ 4,50
500 - 975€ 0,18€ 4,50
1000+€ 0,16€ 4,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

5.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more