onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PT1G

Κωδικός Προϊόντος της RS: 780-4806PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTZS3151PT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

950 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

210 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Typical Gate Charge @ Vgs

5.6 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 34,00

€ 0,34 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 42,16

€ 0,422 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PT1G
Επιλέγξτε συσκευασία

€ 34,00

€ 0,34 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 42,16

€ 0,422 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
100 - 225€ 0,34€ 8,50
250 - 475€ 0,29€ 7,25
500 - 975€ 0,26€ 6,50
1000+€ 0,23€ 5,75

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

950 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

210 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Typical Gate Charge @ Vgs

5.6 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more