N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK onsemi NVB190N65S3FOS

Κωδικός Προϊόντος της RS: 195-2666Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NVB190N65S3F
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

162 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

34 @ 10 V nC

Length

10.67mm

Maximum Operating Temperature

+150 °C

Width

9.65mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Automotive Standard

AEC-Q101

Height

4.58mm

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3,28

Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4,067

Μονάδας (Σε ένα καρούλι των 800) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK onsemi NVB190N65S3FOS

€ 3,28

Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4,067

Μονάδας (Σε ένα καρούλι των 800) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK onsemi NVB190N65S3FOS
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

162 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

34 @ 10 V nC

Length

10.67mm

Maximum Operating Temperature

+150 °C

Width

9.65mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Automotive Standard

AEC-Q101

Height

4.58mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more