Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLT1GOS

Κωδικός Προϊόντος της RS: 195-2668Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NVMFD6H840NLT1G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.05mm

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2,04

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,53

Μονάδας (Σε ένα καρούλι των 1500) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLT1GOS

€ 2,04

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,53

Μονάδας (Σε ένα καρούλι των 1500) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLT1GOS
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.05mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more