N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS

Κωδικός Προϊόντος της RS: 195-2551Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NVMYS025N06CLTWG
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

5.8 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.15mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,55

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,682

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS

€ 0,55

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,682

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

5.8 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.15mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more