Osram Opto, BPW 34 FA IR Si Photodiode, Through Hole DIP
Τεχνικό φυλλάδιο
Προδιαγραφές
Spectrums Detected
Infrared
Wavelength of Peak Sensitivity
880nm
Package Type
DIP
Amplifier Function
No
Mounting Type
Through Hole
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
730nm
Maximum Wavelength Detected
1100nm
Length
4.5mm
Width
4mm
Height
2.2mm
Peak Photo Sensitivity
0.65A/W
Polarity
Reverse
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
PIN Photodiode DIL Package
This family of IR photodiodes, from OSRAM Opto Semiconductors, are from the BPW 34 series. They come in surface mount (SMD) or through-hole DIL plastic packages with a radiant sensitive area of 2.65 x 2.65 mm². They BPW 34 IR photodiodes are designed for applications with wavelength range of up to 1100 nm. Other suitable applications include; photointerrupters, IR remote control and automotive sensors, headsets etc.
IR Photodiodes, OSRAM Opto Semiconductors
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P.O.A.
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P.O.A.
5
Τεχνικό φυλλάδιο
Προδιαγραφές
Spectrums Detected
Infrared
Wavelength of Peak Sensitivity
880nm
Package Type
DIP
Amplifier Function
No
Mounting Type
Through Hole
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
730nm
Maximum Wavelength Detected
1100nm
Length
4.5mm
Width
4mm
Height
2.2mm
Peak Photo Sensitivity
0.65A/W
Polarity
Reverse
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
PIN Photodiode DIL Package
This family of IR photodiodes, from OSRAM Opto Semiconductors, are from the BPW 34 series. They come in surface mount (SMD) or through-hole DIL plastic packages with a radiant sensitive area of 2.65 x 2.65 mm². They BPW 34 IR photodiodes are designed for applications with wavelength range of up to 1100 nm. Other suitable applications include; photointerrupters, IR remote control and automotive sensors, headsets etc.