P-Channel MOSFET, 4 A, 12 V, 6-Pin WSMini6-F1-B Panasonic MTM761110LBF

Κωδικός Προϊόντος της RS: 169-7838Κατασκευαστής: PanasonicΚωδικός Κατασκευαστή: MTM761110LBF
brand-logo
View all in MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

12 V

Package Type

WSMini6-F1-B

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

54 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Height

0.6mm

Series

MTM

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Panasonic

MOSFET Transistors, Panasonic

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

P-Channel MOSFET, 4 A, 12 V, 6-Pin WSMini6-F1-B Panasonic MTM761110LBF

P.O.A.

P-Channel MOSFET, 4 A, 12 V, 6-Pin WSMini6-F1-B Panasonic MTM761110LBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

12 V

Package Type

WSMini6-F1-B

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

54 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Height

0.6mm

Series

MTM

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Panasonic

MOSFET Transistors, Panasonic

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more