Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

Κωδικός Προϊόντος της RS: 121-6899Κατασκευαστής: Renesas ElectronicsΚωδικός Κατασκευαστή: RJP4010AGE-01#P5
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

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Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more