ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

Κωδικός Προϊόντος της RS: 144-2259Κατασκευαστής: ROHMΚωδικός Κατασκευαστή: BSM180D12P3C007
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Length

122mm

Height

17mm

Number of Elements per Chip

2

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.141,28

€ 1.141,28 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.415,19

€ 1.415,19 Μονάδας Με Φ.Π.Α

ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

1

Διατίθεται σε πολλαπλάσια από 1
1€ 1.141,28
2€ 2.282,56
3€ 3.423,84
4€ 4.565,12
5€ 5.706,40
6€ 6.847,68
7€ 7.988,96
8€ 9.130,24
9€ 10.271,52
10€ 11.412,80
11€ 12.554,08
12€ 13.695,36
13€ 14.836,64
14€ 15.977,92
15€ 17.119,20

€ 1.141,28

€ 1.141,28 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.415,19

€ 1.415,19 Μονάδας Με Φ.Π.Α

ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1

Διατίθεται σε πολλαπλάσια από 1
1€ 1.141,28
2€ 2.282,56
3€ 3.423,84
4€ 4.565,12
5€ 5.706,40
6€ 6.847,68
7€ 7.988,96
8€ 9.130,24
9€ 10.271,52
10€ 11.412,80
11€ 12.554,08
12€ 13.695,36
13€ 14.836,64
14€ 15.977,92
15€ 17.119,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Length

122mm

Height

17mm

Number of Elements per Chip

2

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more