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ROHM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001

RS Stock No.: 144-2255Brand: ROHMManufacturers Part No.: BSM300D12P2E001
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

1875 W

Number of Elements per Chip

2

Width

57.95mm

Length

152mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

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Stock information temporarily unavailable.

€ 5,351.12

€ 1,337.78 Each (In a Tray of 4) (Exc. Vat)

€ 6,635.39

€ 1,658.847 Each (In a Tray of 4) (inc. VAT)

ROHM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001

€ 5,351.12

€ 1,337.78 Each (In a Tray of 4) (Exc. Vat)

€ 6,635.39

€ 1,658.847 Each (In a Tray of 4) (inc. VAT)

ROHM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

1875 W

Number of Elements per Chip

2

Width

57.95mm

Length

152mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more