Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB

Κωδικός Προϊόντος της RS: 178-5715Κατασκευαστής: ROHMΚωδικός Κατασκευαστή: HP8S36TB
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

27 A, 80 A

Maximum Drain Source Voltage

30 V

Series

HP8S36

Package Type

HSOP8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

22 W, 29 W

Maximum Gate Source Voltage

±128 V, ±20 V

Width

5.8mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Thailand

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,60

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,744

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB

€ 0,60

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,744

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

27 A, 80 A

Maximum Drain Source Voltage

30 V

Series

HP8S36

Package Type

HSOP8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

22 W, 29 W

Maximum Gate Source Voltage

±128 V, ±20 V

Width

5.8mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more