P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR

Κωδικός Προϊόντος της RS: 178-5898Κατασκευαστής: ROHMΚωδικός Κατασκευαστή: QS6U24TR
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

30 V

Series

QS6U24

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

1.7 nC @ 5 V (N Channel)

Height

0.95mm

Χώρα Προέλευσης

Thailand

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P.O.A.

P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR

25

Διατίθεται σε πολλαπλάσια από 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

25

Διατίθεται σε πολλαπλάσια από 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

30 V

Series

QS6U24

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

1.7 nC @ 5 V (N Channel)

Height

0.95mm

Χώρα Προέλευσης

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more