ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Χώρα Προέλευσης
Thailand
Λεπτομέρειες Προϊόντος
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 8,50
€ 0,34 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,54
€ 0,422 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α
25
€ 8,50
€ 0,34 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,54
€ 0,422 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α
25
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Χώρα Προέλευσης
Thailand
Λεπτομέρειες Προϊόντος
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products