ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Series
RU1C001UN
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.35mm
Length
2.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Χώρα Προέλευσης
Thailand
Λεπτομέρειες Προϊόντος
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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P.O.A.
Μονάδας (Σε ένα πακέτο των 150) (Exc. Vat)Χωρίς Φ.Π.Α
150
P.O.A.
Μονάδας (Σε ένα πακέτο των 150) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
150
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Series
RU1C001UN
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.35mm
Length
2.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Χώρα Προέλευσης
Thailand
Λεπτομέρειες Προϊόντος
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products