Semikron Danfoss SKM400GB126D Dual Half Bridge IGBT Module, 470 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

Κωδικός Προϊόντος της RS: 468-2527Κατασκευαστής: Semikron DanfossΚωδικός Κατασκευαστή: SKM400GB126DDistrelec Article No.: 17100315
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

470 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS3

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Semikron Danfoss SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
€ 468,56Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
Semikron SKM300GB126D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 310 A max, 1200 V, Panel Mount
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 595,83

€ 595,83 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 738,83

€ 738,83 Μονάδας Με Φ.Π.Α

Semikron Danfoss SKM400GB126D Dual Half Bridge IGBT Module, 470 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

€ 595,83

€ 595,83 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 738,83

€ 738,83 Μονάδας Με Φ.Π.Α

Semikron Danfoss SKM400GB126D Dual Half Bridge IGBT Module, 470 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδας
1 - 1€ 595,83
2 - 4€ 574,74
5 - 9€ 554,58
10 - 19€ 534,80
20+€ 516,11

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Semikron Danfoss SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
€ 468,56Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
Semikron SKM300GB126D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 310 A max, 1200 V, Panel Mount
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

470 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS3

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Semikron Danfoss SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
€ 468,56Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
Semikron SKM300GB126D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 310 A max, 1200 V, Panel Mount
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α