Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Semikron DanfossMaximum Continuous Collector Current
114 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 166,02
€ 166,02 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 205,86
€ 205,86 Μονάδας Με Φ.Π.Α
1
€ 166,02
€ 166,02 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 205,86
€ 205,86 Μονάδας Με Φ.Π.Α
1
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Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 1 | € 166,02 |
2 - 4 | € 160,14 |
5 - 7 | € 154,35 |
8 - 15 | € 148,84 |
16+ | € 143,44 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Semikron DanfossMaximum Continuous Collector Current
114 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.