Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
SemikronMaximum Continuous Collector Current
130 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Package Type
SEMITRANS2
Configuration
Dual
Mounting Type
Screw Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Half Bridge
Dimensions
94 x 34 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Χώρα Προέλευσης
Slovakia
Λεπτομέρειες Προϊόντος
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
SemikronMaximum Continuous Collector Current
130 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Package Type
SEMITRANS2
Configuration
Dual
Mounting Type
Screw Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Half Bridge
Dimensions
94 x 34 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Χώρα Προέλευσης
Slovakia
Λεπτομέρειες Προϊόντος
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.