Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
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JOIN FOR FREE
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 8.057,52
€ 447,64 Each (In a Tray of 18) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9.991,32
€ 555,074 Each (In a Tray of 18) Με Φ.Π.Α
18
€ 8.057,52
€ 447,64 Each (In a Tray of 18) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9.991,32
€ 555,074 Each (In a Tray of 18) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
18
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
