STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220

Κωδικός Προϊόντος της RS: 168-5846Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: BUL216
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Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

9 W

Minimum DC Current Gain

12

Transistor Configuration

Single

Maximum Collector Base Voltage

1600 V

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 107,00

€ 2,14 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 132,68

€ 2,654 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220

€ 107,00

€ 2,14 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 132,68

€ 2,654 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 2,14€ 107,00
100 - 200€ 1,70€ 85,00
250 - 450€ 1,67€ 83,50
500 - 950€ 1,49€ 74,50
1000+€ 1,28€ 64,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

9 W

Minimum DC Current Gain

12

Transistor Configuration

Single

Maximum Collector Base Voltage

1600 V

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more