N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 STMicroelectronics LET9045F

Κωδικός Προϊόντος της RS: 178-1387Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: LET9045F
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

80 V

Package Type

M250

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation

108 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

6.09mm

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Transistor Material

Si

Length

9.91mm

Height

3.94mm

Typical Power Gain

17.7 dB

Λεπτομέρειες Προϊόντος

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 195,40

Each (In a Tray of 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 242,296

Each (In a Tray of 25) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 STMicroelectronics LET9045F

€ 195,40

Each (In a Tray of 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 242,296

Each (In a Tray of 25) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 STMicroelectronics LET9045F
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

80 V

Package Type

M250

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation

108 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

6.09mm

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Transistor Material

Si

Length

9.91mm

Height

3.94mm

Typical Power Gain

17.7 dB

Λεπτομέρειες Προϊόντος

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more