Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Χώρα Προέλευσης
Thailand
Λεπτομέρειες Προϊόντος
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 26.310,00
€ 8,77 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 32.624,40
€ 10,875 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
€ 26.310,00
€ 8,77 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 32.624,40
€ 10,875 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Χώρα Προέλευσης
Thailand
Λεπτομέρειες Προϊόντος
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
