Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerSO-10RF
Series
PD5
Mount Type
Surface
Pin Count
10
Maximum Drain Source Resistance Rds
0.75Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
73W
Minimum Operating Temperature
65°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
165°C
Length
15.65mm
Height
3.6mm
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Width
9.6mm
Automotive Standard
No
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
The STMicroelectronics are common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 31,66
€ 31,66 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 39,26
€ 39,26 Μονάδας Με Φ.Π.Α
1
€ 31,66
€ 31,66 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 39,26
€ 39,26 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerSO-10RF
Series
PD5
Mount Type
Surface
Pin Count
10
Maximum Drain Source Resistance Rds
0.75Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
73W
Minimum Operating Temperature
65°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
165°C
Length
15.65mm
Height
3.6mm
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Width
9.6mm
Automotive Standard
No
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
The STMicroelectronics are common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
