STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Χώρα Προέλευσης
China
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€ 32.860,00
€ 32,86 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 40.746,40
€ 40,746 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
€ 32.860,00
€ 32,86 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 40.746,40
€ 40,746 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products