STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3AG

Κωδικός Προϊόντος της RS: 215-225Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SCT018H65G3AG
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79.4nC

Maximum Power Dissipation Pd

385W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

75°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 32.860,00

€ 32,86 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 40.746,40

€ 40,746 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3AG

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 32.860,00
2000€ 65.720,00
3000€ 98.580,00
4000€ 131.440,00
5000€ 164.300,00
6000€ 197.160,00
7000€ 230.020,00
8000€ 262.880,00
9000€ 295.740,00
10000€ 328.600,00
11000€ 361.460,00
12000€ 394.320,00
13000€ 427.180,00
14000€ 460.040,00
15000€ 492.900,00

€ 32.860,00

€ 32,86 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 40.746,40

€ 40,746 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3AG

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 32.860,00
2000€ 65.720,00
3000€ 98.580,00
4000€ 131.440,00
5000€ 164.300,00
6000€ 197.160,00
7000€ 230.020,00
8000€ 262.880,00
9000€ 295.740,00
10000€ 328.600,00
11000€ 361.460,00
12000€ 394.320,00
13000€ 427.180,00
14000€ 460.040,00
15000€ 492.900,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79.4nC

Maximum Power Dissipation Pd

385W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

75°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more