STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

Κωδικός Προϊόντος της RS: 214-955Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SCT027H65G3AG
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.6nC

Forward Voltage Vf

2.9V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 26,05

€ 26,05 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 32,30

€ 32,30 Μονάδας Με Φ.Π.Α

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
Επιλέγξτε συσκευασία

€ 26,05

€ 26,05 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 32,30

€ 32,30 Μονάδας Με Φ.Π.Α

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 26,05
10 - 99€ 23,81
100+€ 22,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.6nC

Forward Voltage Vf

2.9V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more