STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

Κωδικός Προϊόντος της RS: 214-960Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SCT070H120G3-7
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

224W

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.4 mm

Length

15.25mm

Standards/Approvals

RoHS

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 15.060,00

€ 15,06 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 18.674,40

€ 18,674 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 15.060,00
2000€ 30.120,00
3000€ 45.180,00
4000€ 60.240,00
5000€ 75.300,00
6000€ 90.360,00
7000€ 105.420,00
8000€ 120.480,00
9000€ 135.540,00
10000€ 150.600,00
11000€ 165.660,00
12000€ 180.720,00
13000€ 195.780,00
14000€ 210.840,00
15000€ 225.900,00

€ 15.060,00

€ 15,06 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 18.674,40

€ 18,674 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 15.060,00
2000€ 30.120,00
3000€ 45.180,00
4000€ 60.240,00
5000€ 75.300,00
6000€ 90.360,00
7000€ 105.420,00
8000€ 120.480,00
9000€ 135.540,00
10000€ 150.600,00
11000€ 165.660,00
12000€ 180.720,00
13000€ 195.780,00
14000€ 210.840,00
15000€ 225.900,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

224W

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.4 mm

Length

15.25mm

Standards/Approvals

RoHS

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more