STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Series
SiC MOSFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.203 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
239V
Number of Elements per Chip
1
Transistor Material
SiC
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 20.670,00
€ 20,67 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 25.630,80
€ 25,631 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
€ 20.670,00
€ 20,67 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 25.630,80
€ 25,631 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Series
SiC MOSFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.203 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
239V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products