STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Κωδικός Προϊόντος της RS: 201-4415Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SCT20N120H
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 20.600,00

€ 20,60 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 25.544,00

€ 25,544 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 20.600,00
2000€ 41.200,00
3000€ 61.800,00
4000€ 82.400,00
5000€ 103.000,00
6000€ 123.600,00
7000€ 144.200,00
8000€ 164.800,00
9000€ 185.400,00
10000€ 206.000,00
11000€ 226.600,00
12000€ 247.200,00
13000€ 267.800,00
14000€ 288.400,00
15000€ 309.000,00

€ 20.600,00

€ 20,60 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 25.544,00

€ 25,544 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 20.600,00
2000€ 41.200,00
3000€ 61.800,00
4000€ 82.400,00
5000€ 103.000,00
6000€ 123.600,00
7000€ 144.200,00
8000€ 164.800,00
9000€ 185.400,00
10000€ 206.000,00
11000€ 226.600,00
12000€ 247.200,00
13000€ 267.800,00
14000€ 288.400,00
15000€ 309.000,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more