Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.8mm
Height
10.4mm
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 20,36
€ 20,36 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 25,25
€ 25,25 Μονάδας Με Φ.Π.Α
Standard
1
€ 20,36
€ 20,36 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 25,25
€ 25,25 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.8mm
Height
10.4mm
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
