Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.8mm
Height
10.4mm
Standards/Approvals
No
Automotive Standard
No
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 20,36
€ 20,36 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 25,25
€ 25,25 Μονάδας Με Φ.Π.Α
Standard
1
€ 20,36
€ 20,36 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 25,25
€ 25,25 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.8mm
Height
10.4mm
Standards/Approvals
No
Automotive Standard
No
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
