Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
122nC
Maximum Gate Source Voltage Vgs
25V
Maximum Power Dissipation Pd
318W
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 1.770,60
€ 59,02 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.195,54
€ 73,185 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 1.770,60
€ 59,02 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.195,54
€ 73,185 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
122nC
Maximum Gate Source Voltage Vgs
25V
Maximum Power Dissipation Pd
318W
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
