Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Standard
1
P.O.A.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
