Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 47.190,00
€ 47,19 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 58.515,60
€ 58,516 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
€ 47.190,00
€ 47,19 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 58.515,60
€ 58,516 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
