STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Operating Temperature
175°C
Width
4.8 mm
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Automotive Standard
No
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 47,69
€ 47,69 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 59,14
€ 59,14 Μονάδας Με Φ.Π.Α
Standard
1
€ 47,69
€ 47,69 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 59,14
€ 59,14 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Operating Temperature
175°C
Width
4.8 mm
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Automotive Standard
No

