STMicroelectronics SCT SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

Κωδικός Προϊόντος της RS: 202-5487Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SCTW35N65G2VAG
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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€ 750,30

€ 25,01 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 930,37

€ 31,012 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics SCT SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

30

Διατίθεται σε πολλαπλάσια από 30
30€ 750,30
60€ 1.500,60
90€ 2.250,90
120€ 3.001,20
150€ 3.751,50
180€ 4.501,80
210€ 5.252,10
240€ 6.002,40
270€ 6.752,70
300€ 7.503,00
330€ 8.253,30
360€ 9.003,60
390€ 9.753,90
420€ 10.504,20
450€ 11.254,50

€ 750,30

€ 25,01 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 930,37

€ 31,012 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics SCT SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

30

Διατίθεται σε πολλαπλάσια από 30
30€ 750,30
60€ 1.500,60
90€ 2.250,90
120€ 3.001,20
150€ 3.751,50
180€ 4.501,80
210€ 5.252,10
240€ 6.002,40
270€ 6.752,70
300€ 7.503,00
330€ 8.253,30
360€ 9.003,60
390€ 9.753,90
420€ 10.504,20
450€ 11.254,50

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more