Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 845,70
€ 28,19 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.048,67
€ 34,956 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 845,70
€ 28,19 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.048,67
€ 34,956 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
