
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
34.95mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 29,94
€ 29,94 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 37,13
€ 37,13 Μονάδας Με Φ.Π.Α
Standard
1
€ 29,94
€ 29,94 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 37,13
€ 37,13 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
34.95mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.