STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Series
SCTWA90N65G2V-4
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.024 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 1.534,20
€ 51,14 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.902,41
€ 63,414 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 1.534,20
€ 51,14 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.902,41
€ 63,414 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
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Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Series
SCTWA90N65G2V-4
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.024 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products