STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

Κωδικός Προϊόντος της RS: 213-3943Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SCTWA90N65G2V-4
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.553,70

€ 51,79 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.926,59

€ 64,22 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

30

Διατίθεται σε πολλαπλάσια από 30
30€ 1.553,70
60€ 3.107,40
90€ 4.661,10
120€ 6.214,80
150€ 7.768,50
180€ 9.322,20
210€ 10.875,90
240€ 12.429,60
270€ 13.983,30
300€ 15.537,00
330€ 17.090,70
360€ 18.644,40
390€ 20.198,10
420€ 21.751,80
450€ 23.305,50

€ 1.553,70

€ 51,79 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.926,59

€ 64,22 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

30

Διατίθεται σε πολλαπλάσια από 30
30€ 1.553,70
60€ 3.107,40
90€ 4.661,10
120€ 6.214,80
150€ 7.768,50
180€ 9.322,20
210€ 10.875,90
240€ 12.429,60
270€ 13.983,30
300€ 15.537,00
330€ 17.090,70
360€ 18.644,40
390€ 20.198,10
420€ 21.751,80
450€ 23.305,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more