Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
26.67mm
Height
4.11mm
Λεπτομέρειες Προϊόντος
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 102,11
Each (In a Tray of 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 126,616
Each (In a Tray of 25) (Including VAT) Με Φ.Π.Α
25
€ 102,11
Each (In a Tray of 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 126,616
Each (In a Tray of 25) (Including VAT) Με Φ.Π.Α
25
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Transistor Material
Si
Length
26.67mm
Height
4.11mm
Λεπτομέρειες Προϊόντος
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.