STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

Κωδικός Προϊόντος της RS: 719-632Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SGT080R70ILB
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Χώρα Προέλευσης

China

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 4,57

€ 4,57 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 5,67

€ 5,67 Μονάδας Με Φ.Π.Α

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

1

Διατίθεται σε πολλαπλάσια από 1
1€ 4,57
2€ 9,14
3€ 13,71
4€ 18,28
5€ 22,85
6€ 27,42
7€ 31,99
8€ 36,56
9€ 41,13
10€ 45,70
11€ 50,27
12€ 54,84
13€ 59,41
14€ 63,98
15€ 68,55

€ 4,57

€ 4,57 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 5,67

€ 5,67 Μονάδας Με Φ.Π.Α

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1

Διατίθεται σε πολλαπλάσια από 1
1€ 4,57
2€ 9,14
3€ 13,71
4€ 18,28
5€ 22,85
6€ 27,42
7€ 31,99
8€ 36,56
9€ 41,13
10€ 45,70
11€ 50,27
12€ 54,84
13€ 59,41
14€ 63,98
15€ 68,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more