STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Κωδικός Προϊόντος της RS: 719-637Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: SGT350R70GTK
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Χώρα Προέλευσης

China

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3.400,00

€ 1,36 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.216,00

€ 1,686 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

2500

Διατίθεται σε πολλαπλάσια από 2500
2500€ 3.400,00
5000€ 6.800,00
7500€ 10.200,00
10000€ 13.600,00
12500€ 17.000,00
15000€ 20.400,00
17500€ 23.800,00
20000€ 27.200,00
22500€ 30.600,00
25000€ 34.000,00
27500€ 37.400,00
30000€ 40.800,00
32500€ 44.200,00
35000€ 47.600,00
37500€ 51.000,00

€ 3.400,00

€ 1,36 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.216,00

€ 1,686 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

2500

Διατίθεται σε πολλαπλάσια από 2500
2500€ 3.400,00
5000€ 6.800,00
7500€ 10.200,00
10000€ 13.600,00
12500€ 17.000,00
15000€ 20.400,00
17500€ 23.800,00
20000€ 27.200,00
22500€ 30.600,00
25000€ 34.000,00
27500€ 37.400,00
30000€ 40.800,00
32500€ 44.200,00
35000€ 47.600,00
37500€ 51.000,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more