STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7

Κωδικός Προϊόντος της RS: 792-5697PΚατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB100N10F7
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET H7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 105,75

€ 4,23 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 131,13

€ 5,245 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7
Επιλέγξτε συσκευασία

€ 105,75

€ 4,23 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 131,13

€ 5,245 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
25 - 45€ 4,23€ 21,15
50 - 120€ 3,86€ 19,30
125 - 245€ 3,52€ 17,60
250+€ 3,39€ 16,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET H7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more