STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STB100N6F7

Κωδικός Προϊόντος της RS: 906-4668Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB100N6F7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.6mm

Forward Diode Voltage

1.2V

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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€ 12,65

€ 2,53 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 15,69

€ 3,137 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STB100N6F7
Επιλέγξτε συσκευασία

€ 12,65

€ 2,53 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 15,69

€ 3,137 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STB100N6F7

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Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.6mm

Forward Diode Voltage

1.2V

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more